Datasheet > MMBTSC3838

MMBTSC3838

更新时间： 2024-09-23 10:52:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	192K
描述
NPN Silicon Epitaxial Planar Transistor

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中文翻译

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MMBTSC3838 数据手册

MMBTSC3838

NPN Silicon Epitaxial Planar Transistor

for high frequency amplifier application

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

P_tot

T_j

200

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 10 V, I_C= 5 mA

Current Gain Group

h_FE

120

160

240

Collector Cutoff Current

at V_CB= 10 V

Emitter Cutoff Current

at V_EB= 2 V

Collector Base Breakdown Voltage

at I_C= 10 µA

Collector Emitter Breakdown Voltage

at I_C= 1 mA

Emitter Base Breakdown Voltage

at I_E= 10 µA

Collector Emitter Saturation Voltage

at I_C= 10 mA, I_B= 5 mA

Transition Frequency

at V_CE= 10 V, I_E= 10 mA, f = 500 MHz

I_CBO

I_EBO

0.5

µA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

f_T

0.5

1.4

3.2

GHz

Output Capacitance

at V_CB= 10 V, f = 1 MHz

C_ob

1.5

Noise Figure

at V_CE= 6 V, I_C= 2 mA , f = 500 MHz, Rg = 50 Ω

3.5

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 26/05/2007

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