Datasheet > MMBTSC380

MMBTSC380

更新时间： 2024-09-23 05:49:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	139K
描述
NPN Silicon Epitaxial Planar Transistor

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MMBTSC380 数据手册

MMBTSC380

NPN Silicon Epitaxial Planar Transistor

High frequency amplifier application

for FM IF, OSC stage and AM CONV. IF stage

The transistor is subdivided into three groups R,

O, and Y, according to its DC current gain.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Emitter Current

-I_E

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

125

T_S

-55 to +125

Characteristics at T_amb= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 12 V, I_C= 2 mA Current Gain Group

h_FE

120

140

240

Collector Cutoff Current

at V_CB= 35 V

I_CBO

I_EBO

0.1

0.4

µA

Emitter Cutoff Current

at V_EB= 4 V

Collector Emitter Saturation Voltage

at I_C= 10 mA, I_B= 1 mA

V_CE(sat)

V_BE(sat)

f_T

Base Emitter Saturation Voltage

at I_C= 10 mA, I_B= 1 mA

Transition Frequency

at V_CE= 10 V, I_C= 1 mA

100

1.4

400

3.2

MHz

Collector Output Capacitance

at V_CB= 10 V, f = 1 MHz

C_ob

Collector Base Time Constant

at V_CE= 10 V, -I_E= 1 mA, f = 30 MHz

C_c,r_bb’

G_pe

Power Gain

at V_CC= 6 V, f = 10.7 MHz, -I_E= 1 mA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 06/05/2006

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