Datasheet > MMBTSB1198

MMBTSB1198

更新时间： 2024-01-02 00:42:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
1页	83K
描述
PNP Silicon Epitaxial Planar Transistor

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中文翻译

获取价格

数据手册

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MMBTSB1198 数据手册

MMBTSB1198

PNP Silicon Epitaxial Planar Transistor

Low frequency transistor

The transistor is subdivided into two groups Q and

R, according to its DC current gain.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

0.5

Collector Current

Collector Power Dissipation

Junction Temperature

P_tot

200

T_j

150

Storage Temperature Range

T_S

-55 to +150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 3 V, -I_C= 100 mA

h_FE

120

180

270

390

Collector Cutoff Current

at -V_CB= 50 V

-I_CBO

-I_EBO

-V_CBO

-V_EBO

-V_CEO

-V_CE(sat)

C_ob

0.5

µA

Emitter Cutoff Current

at -V_EB= 4 V

0.5

Collector-Base Breakdown Voltage

at -I_C= 50 µA

Emitter-Base Breakdown Voltage

at -I_E= 50 µA

Collector-Emitter Breakdown Voltage

at -I_C= 2 mA

0.5

Collector-Emitter Saturation Voltage

at -I_C= 500 mA, -I_B= 50 mA

Output Capacitance

at -V_CB= 10 V, f = 1 MHz

180

Transition Frequency

at -V_CE= 10 V, I_E= 50 mA, f = 100 MHz

f_T

MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 21/12/2005

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