Datasheet > MMBTSA812O

MMBTSA812O

更新时间： 2024-01-31 01:43:29

品牌	Logo	应用领域
平晶微 - PJSEMI		/
页数	文件大小	规格书
3页	802K
描述
PNP Transistor

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中文翻译

获取价格

数据手册

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MMBTSA812O 数据手册

MMBTSA812

PNP Transistor

SOT-23

Features

⚫

High DC current gain.

High voltage

⚫

The transistor is subdivided into four groups O, Y, G and L,

according to its DC current gain.

1.Base 2.Emitter 3.Collector

Marking Code: O: M4

Y: M5

G: 3F

L: M7

Absolute Maximum Ratings

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

-V_CBO

Collector Base Voltage

-V_CEO

Collector Emitter Voltage

-V_EBO

-I_C

Emitter Base Voltage

Collector Current

100

200

P_C

Power Dissipation

T_J

℃

Junction Temperature

150

T_STG

Storage Temperature Range

-55 to 150

Electrical Characteristics (T_A=25℃)

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE = 6 V, -IC = 1 mA

180

270

400

600

Gain Group

135

200

300

H_FE

Collector Base Cutoff Current

at -VCB = 60 V

-I_CBO

100

Emitter Base Cutoff Current

at -VEB = 5 V

-I_EBO

100

Collector Base Breakdown Voltage

at -IC = 100 μA

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

Collector Emitter Breakdown Voltage

at -IC = 1 mA

Emitter Base Breakdown Voltage

at -IE = 100 μA

Collector Emitter Saturation Voltage

at -IC = 100 mA, -IB = 10 mA

0.3

Transition Frequency

at -VCE = 6 V, -IC = 10 mA

f_T

180

4.5

MHz

Collector Output Capacitance

at -VCB = 10 V, f = 1 MHz

C_ob

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Revison：1.0 Sep-2018

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