Datasheet > MMBTSA1015

MMBTSA1015

更新时间： 2024-09-26 05:49:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	154K
描述
PNP Silicon Epitaxial Planar Transistor

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数据手册

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MMBTSA1015 数据手册

MMBTSA1015

PNP Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into three groups O, Y

and G, according to its DC current gain. As

complementary type the NPN transistor

MMBTSC1815 is recommended.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

150

Base Current

-I_B

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 65 to +150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -V_CE= 6 V, -I_C= 2 mA

Current Gain Group

h_FE

120

200

140

240

400

at -V_CE= 6 V, -I_C= 150 mA

Collector Base Cutoff Current

at -V_CB= 50 V

Emitter Base Cutoff Current

at -V_EB= 5 V

Collector Base Breakdown Voltage

at -I_C=100 µA

Collector Emitter Breakdown Voltage

at -I_C= 10 mA

-I_CBO

-I_EBO

0.1

µA

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE(sat)

f_T

Emitter Base Breakdown Voltage

at -I_E= 10 µA

Collector Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 10 mA

Base Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 10 mA

Gain Bandwidth Product

at -V_CE= 10 V, -I_C= 1 mA

Output Capacitance

0.3

1.1

MHz

C_OB

at -V_CB= 10 V, f = 1 MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 11/12/2007

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