MMBTRC241SS…MMBTRC246SS
NPN Silicon Epitaxial Planar Digital Transistors
Collector
(Output)
Feature
• With built-in bias resistors
R1
• Simplify circuit design
Base
(Input)
• Reduce a quantity of parts and manufacturing
Process
R2
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
Emitter
(Common)
Applications
• For high current switching, interface
circuit and driver circuit
Resistor Values
Type
R1 (KΩ)
R2 (KΩ)
Type
R1 (KΩ)
R2 (KΩ)
10
MMBTRC241SS
MMBTRC242SS
MMBTRC243SS
1
1
MMBTRC244SS
MMBTRC245SS
MMBTRC246SS
10
1
2.2
4.7
2.2
4.7
10
2.2
10
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VCBO
Value
50
Unit
V
Collector Base Voltage
Collector Emitter Voltage
VCEO
50
V
MMBTRC241SS
MMBTRC242SS
MMBTRC243SS
MMBTRC244SS
MMBTRC245SS
MMBTRC246SS
10, -10
12, -10
20, -10
30, -10
10, -5
12, -6
300
Input Voltage
VIN
V
Collector Current
IC
Ptot
Tj
mA
Total Power Dissipation
Junction Temperature
Storage Temperature Range
200
mW
O
150
C
O
Tstg
- 55 to + 150
C
Thermal Characteristics
Parameter
Symbol
RθJA
Max.
625
Unit
/W
Thermal Resistance from Junction to Ambient 1)
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
®
Dated : 19/09/2022 Rev:03
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