Datasheet > MMBTRC102SSP

MMBTRC102SSP

更新时间： 2024-09-10 14:54:43

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
4页	223K
描述
数字三极管

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MMBTRC102SSP 数据手册

MMBTRC102SSP

NPN Silicon Epitaxial Planar Digital Transistors

Collector

(Output)

Features

Base

• With built-in bias resistors

• Simplify circuit design

(Input)

1. Base

2. Emitter 3. Collector

• Reduce a quantity of parts and

manufacturing process

Emitter

(Common)

SOT-23 Plastic Package

Applications

• For switching and interface circuit and drive circuit applications

Resistor Values

R1 (KΩ)

R2 (KΩ)

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

V_CBO

V_CEO

V_IN

Input Voltage

30, -10

100

Collector Current

I_C

Peak Collector Current, Pulsed

Total Power Dissipation

Operating Junction Temperature Range

I_CM

100

P_tot

200

T_j,T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

℃/W

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 4

Dated: 28/06/2023 Rev: 01

12 3 4

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