Datasheet > MMBTH10

MMBTH10

更新时间： 2024-09-22 22:54:39

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管光电二极管
页数	文件大小	规格书
2页	57K
描述
NPN SURFACE MOUNT VHF/UHF TRANSISTOR

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中文翻译

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MMBTH10 数据手册

MMBTH10

NPN SURFACE MOUNT VHF/UHF TRANSISTOR

Features

Designed for VHF/UHF Amplifier Applications

SOT-23

and High Output VHF Oscillators

Dim

Min

0.37

1.20

2.30

Max

0.51

1.40

2.50

1.03

0.60

2.05

High Current Gain Bandwidth Product

Ideal for Mixer and RF Amplifier Applications

with collector currents in the 100mA - 30 mA

Range

TOP VIEW

0.89

Mechanical Data

0.45

Case: SOT-23, Molded Plastic

Case material - UL Flammability Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

Marking (See Page 2): K3H, K3Y

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approx.)

1.78

2.80

3.00

0.013

0.903

0.45

0.085

0°

0.10

1.10

0.61

0.180

8°

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

MMBTH10

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

3.0

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

°C/W

°C

P_d

300

R_qJA

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

417

T_j, T_STG

-55 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS (Note 2)

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Symbol

Min

Max

Unit

Test Condition

I_C= 1mA I_B= 0

I_C= 100mA, I_E= 0

I_E= 10mA, I_C= 0

V_CB= 25V, I_E= 0

V_EB= 2V, I_C= 0

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

3.0

100

I_EBO

Emitter Cutoff Current

ON CHARACTERISTICS (Note 2)

DC Current Gain

I_C

= 4mA, V_CE= 10.0V

h_FE

0.5

V_CE(SAT)

V_BE(SAT)

Collector-Emitter Saturation Voltage

Base- Emitter On Voltage

I_C= 4mA, I_B= 400mA

I_C= 4mA, V_CE= 10.0V

0.95

SMALL SIGNAL CHARACTERISTICS

Current-Gain-Bandwidth Product

Collector-Base Capacitance

V_CE= 10V, f = 100MHz, I_C= 4mA

V_CB= 10V, f = 1.0MHz, I_E= 0

V_CB= 10V, f = 31.8MHz, I_C= 4mA

f_T

650

0.7

0.65

MHz

C_CB

C_RB

Collector-Base Feedback Capacitance

Collector-Base Time Constant

Rb’Cc

Note:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

DS31031 Rev. 4 - 2

1 of 2

MMBTH10

www.diodes.com

中文翻译

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