Datasheet > MMBTH10

MMBTH10

更新时间： 2024-11-13 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1142K
描述
NPN Silicon Transistor

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中文翻译

获取价格

数据手册

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MMBTH10 数据手册

SMD Type

Transistors

NPN Transistors

MMBTH10 (KMBTH10)

SOT-23

Unit: mm

+0.1

-0.1

■ Features

2.9

0.4

+0.1

-0.1

●Collector Current Capability IC=0.05A

●Collector Emitter Voltage V^CEO=25V

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

0.05

225

556

150

℃/W

RθJA

℃

Storage Temperature Range

stg

-55 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， I = 0

= 10μA， I = 0

CB=25 V , I = 0

EB= 2V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

100

0.5

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=4 mA, I

CE=10V,I

=0.4mA

B=0.4mA

1.2

= 4 mA

= 4mA

= 0,f=1MHz

= 4mA,f=100MHz

0.95

hFE

^CE= 10V, I

^CB= 10V, I

CE= 10V, I

Collector output capacitance

Transition frequency

0.7

650

MHz

■ Classification of hfe

Marking

3EM

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中文翻译

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