Datasheet > MMBTH10

MMBTH10

更新时间： 2024-11-13 12:32:59

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
1页	90K
描述
High Current Gain Bandwidth Product

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中文翻译

获取价格

数据手册

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MMBTH10 数据手册

SMD Type

TransistIoCrs

Product specification

MMBTH10

SOT-23

Unit: mm

+0.1

2.9_-0.1

+0.1

0.4_-0.1

■ Features

● High Current Gain Bandwidth Product

● Ideal for Mixer and RF Amplifier Applications

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance, Junction to Ambient (Note 1)

Junction Temperature

℃/W

℃

300

RθJA

417

150

Storage Temperature

Tstg

-55 to 150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditons

Min

Typ Max

Unit

Collecto- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector cut-off current

V(BR)CBO

V(BR)CEO

V(BR)EBO

IcBO

Ic= 100 μA， IE=0

Ic= 0.1 mA， IB=0

IE= 10μA， IC=0

VCB= 25 V , IE=0

VEB= 2V , IC=0

0.1

μA

Emitter cut-off current

IEBO

DC current gain

hFE

VCE= 10V, IC= 4mA

Collector-emitter saturation voltage

Base - emitter saturation voltage

Transition frequency

VCE(sat) IC=4 mA, IB= 5mA

0.4

0.5

VBE(sat) IC= 50 mA, IB= 0.4mA

VCE= 10V, IC= 4mA,f=100MHz

650

MHz

■ Marking

Marking

3EM

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

中文翻译

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