Datasheet > MMBTH10

MMBTH10

更新时间： 2024-09-23 04:39:27

品牌	Logo	应用领域
WEITRON		晶体晶体管光电二极管
页数	文件大小	规格书
5页	225K
描述
NPN Silicon VHF/UHF Transistor

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中文翻译

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数据手册

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MMBTH10 数据手册

MMBTH10

COLLECTOR

NPN Silicon VHF/UHF Transistor

P b

Lead(Pb)-Free

BASE

SOT-23

EMITTER

(Ta=25 C)

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

3.0

Emitter-Base Voltage

EBO

Collector Current - Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristics

Total Device Dissipation FR-5 Board⁽¹⁾

T_A=25 C

Derate above 25 C

Thermal Resistance, Junction Ambient

Symbol

Value

Unit

225

mW/ C

C/W

1.8

556

-55 to +150

Junction and Storage, Temperature

Tstg

Device Marking

MMBTH10=3EM

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I =0)

Vdc

(BR)CEO

Vdc

Collector-Base Breakdown Voltage (I = 100 uAdc, I =0)

(BR)CBO

3.0

Emitter-Base Breakdown Voltage (I = 10 uAdc, I =0)

(BR)EBO

nAdc

100

Collector Cutoff Current (V = 25Vdc, I =0)

CBO

Emitter Cutoff Current (V = 2.0 V c, I =0)

EBO

1. FR-5=1.0 0.75 0.062 in

WEITRON

http://www.weitron.com.tw

1/5

29-Aug-05

12 3 4 5

中文翻译

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