PNP Transistor
80V 225mW SOT-23
MMBTA56
FEATURE
•
•
•
Silicon Planar Design For High Voltage Application
Collector current: 500mA
Application: Signal Processing, Switching, Amplification
MECHANICAL DATA
•
Case: SOT-23. molded plastic
•
Terminals: Solderable per MIL-STD-750, Method 2026
MAXIMUM RATING
Parameter
Symbol
Value
80
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
80
V
4
V
500
225
1.8
mA
TA= 25°C
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C
Power Dissipation (Note 2)
Power Dissipation, (Note 3)
Thermal Resistance
PD
PD
Derate above 25°C
TA= 25°C
300
2.4
Derate above 25°C
Junction to Ambient, (Note 2)
Junction to Ambient, (Note 3)
556
417
-55 ~+150
RθJA
Operating Junction and Storage Temperature
Note:
TJ, Tstg
1. TA=25˚C unless otherwise noted
2. Device on FR–4 = 70 x 60 x 1mm.
3. Alumina = 0.4 x 0.3 x0.024 in. 99.5 alumina.
ELECTRICAL CHARACTERISTICS
Parameter- ON Characteristic
Conditions
Symbol
Min.
100
100
-
Max.
Unit
VCE =1.0V, IC=10mA
-
-
DC Current Gain
hFE
-
VCE =1.0V, IC=100mA
IC=100mA, IB=10mA
IC=100mA, VCE=1V
Conditions
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE(SAT)
VBE(ON)
Symbol
V(BR)CEO
V(BR)EBO
ICES
0.25
1.20
Max.
-
V
V
-
Parameter- OFF Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Min.
80
Unit
V
IC=1.0mA, IB = 0
IE=100μA, IC = 0
4.0
-
-
V
VCE=60V, IB = 0
0.1
0.1
Max.
-
µA
µA
Unit
MHz
Collector Base Cut-Off Current
Parameter-Small Signal
VCB=80V, IE = 0
ICBO
-
Conditions
Symbol
fT
Min.
100
Current–Gain — Bandwidth Product
VCE =2V, IC=10mA, f=100 MHz
Note:
1. TA=25˚C unless otherwise noted
Rev. 2b 04/01/22
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