Datasheet > MMBTA13

MMBTA13

更新时间： 2024-11-19 14:53:35

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	552K
描述
双极型晶体管

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中文翻译

获取价格

数据手册

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MMBTA13 数据手册

MMBTA13/MMBTA14

NPN Darlington Amplifier Transistor

1. BASE

2. EMITTER

3. COLLECTOR

SOT-23

Min

FEATURES

Dim

Max

3.10

1.50

2.70

Epitaxial planar die construction.

1.10

1.0 Typical

0.4 Typical

Complementary PNP type available

(MMBTA63/MMBTA64).

High current gain.

0.35

0.48

2.00

0.1

1.80

0.02

0.1 Typical

2.20

2.60

All Dimensions in mm

APPLICATIONS

Ideal for medium power amplification and switching.

ORDERING INFORMATION

Type No.

Marking

Package Code

MMBTA13

MMBTA14

K2D

K3D

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

UNIT

collector-base voltage

MMBTA13

MMBTA14

V_CBO

collector-emitter voltage

MMBTA13

MMBTA14

V_CEO

V_EBO

I_C

emitter-base voltage

collector current (DC)

Collector dissipation

0.3

P_C

0.3

R_θJA

T_j,T_stg

Thermal Resistance, Junction to Ambient

junction and storage temperature

417

°C/W

°C

-55 to +150

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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