Datasheet > MMBTA06

MMBTA06

更新时间： 2024-09-25 22:54:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体放大器晶体管光电二极管
页数	文件大小	规格书
4页	149K
描述
NPN General Purpose Amplifier

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MMBTA06 数据手册

Discrete POWER & Signal

Technologies

MPSA06

MMBTA06

PZTA06

TO-92

SOT-23

Mark: 1G

SOT-223

NPN General Purpose Amplifier

This device is designed for general purpose amplifier applications

at collector currents to 300 mA. Sourced from Process 33.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

4.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

500

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSA06

*MMBTA06

**PZTA06

P_D

Total Device Dissipation

625

5.0

350

2.8

1,000

8.0

mW/ C

Derate above 25 C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

357

125

R_θ

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

1997 Fairchild Semiconductor Corporation

12 3 4

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MMBTA06 替代型号

型号	品牌	替代类型	描述	数据表
MMBTA06_D87Z	FAIRCHILD	类似代替	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FR
MMBT5551	FAIRCHILD	类似代替	NPN General Purpose Amplifier

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