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MMBTA06 PDF预览

MMBTA06

更新时间: 2024-09-27 17:15:31
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
3页 678K
描述
三极管

MMBTA06 数据手册

 浏览型号MMBTA06的Datasheet PDF文件第2页浏览型号MMBTA06的Datasheet PDF文件第3页 
R
UMW  
UMW MMBTA06  
SOT-23 Plastic-Encapsulate Transistors  
MMBTA06 TRANSISTOR (NPN)  
SOT-23  
FEATURES  
For Switching and Amplifier Applications  
Complementary Type PNP Transistor MMBTA56  
MARKING: 1GM  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
80  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
V
4
Collector Current  
500  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
300  
PC  
RΘJA  
Tj  
416  
150  
Storage Temperature  
Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
Min  
Typ  
Max  
Unit  
V(BR)CBO IC=0.1mA, IE=0  
V(BR)CEO IC=1mA, IB=0  
V(BR)EBO IE=0.1mA, IC=0  
80  
80  
4
V
Collector-base breakdown voltage  
V
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
ICBO  
ICES  
VCB=80V, IE=0  
0.1  
0.1  
0.1  
400  
µA  
µA  
µA  
VCE=60V, IB=0  
Collector cut-off current  
IEBO  
VEB=3V, IC=0  
Emitter cut-off current  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=1V, IC=10mA  
VCE=1V, IC=100mA  
IC=100mA, IB=10mA  
IC=100mA, IB=10mA  
VCE=2V,IC=10mA, f=100MHz  
100  
100  
DC current gain  
0.25  
1.2  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
100  
MHz  
www.umw-ic.com  
1
友台半导体有限公司  

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