Datasheet > MMBTA06

MMBTA06

更新时间： 2023-12-06 20:08:14

品牌	Logo	应用领域
江苏长电/长晶 - CJ		光电二极管晶体管
页数	文件大小	规格书
4页	2153K
描述
SOT-23

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中文翻译

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数据手册

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MMBTA06 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBTA06 TRANSISTOR (NPN)

SOT–23

FEATURES

 For Switching and Amplifier Applications

 Complementary Type PNP Transistor MMBTA56

MARKING

1. BASE

2. EMITTER

3. COLLECTOR

1GM=Device code

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Equivalent Circuit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

300

416

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

℃

-55～+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=0.1mA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=0.1mA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_CEO

V_CB=80V, I_E=0

0.1

µA

V_CE=60V, I_B=0

Collector cut-off current

I_EBO

V_EB=3V, I_C=0

0.1

400

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=1V, I_C=10mA

V_CE=1V, I_C=100mA

I_C=100mA, I_B=10mA

V_CE=2V,I_C=10mA, f=100MHz

100

DC current gain

0.25

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

100

MHz

www.jscj-elec.com

Rev. - 2.3

12 3 4

中文翻译

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