MMBT8099LT1
Preferred Device
Amplifier Transistor
NPN Silicon
Features
http://onsemi.com
• Pb−Free Package is Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Value
80
Unit
Vdc
1
V
CEO
V
CBO
V
EBO
BASE
80
Vdc
2
6.0
Vdc
EMITTER
Collector Current − Continuous
I
500
mAdc
C
THERMAL CHARACTERISTICS
Characteristic
3
Symbol
Max
Unit
1
Total Device Dissipation FR−5 Board
P
D
2
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
q
JA
556
°C/W
SOT−23 (TO−236)
CASE 318
STYLE 6
Total Device Dissipation Alumina
P
D
Substrate (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
MARKING DIAGRAM
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
q
JA
417
°C/W
Junction and Storage Temperature Range T , T
−55 to +150
°C
J
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
KB M G
G
1
1. FR−5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
KB
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT8099LT1
SOT−23
3000/Tape & Reel
3000/Tape & Reel
MMBT8099LT1G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 1
MMBT8099LT1/D