Datasheet > MMBT8050W

MMBT8050W

更新时间： 2024-09-30 10:52:27

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	147K
描述
NPN Silicon Epitaxial Planar Transistor

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数据手册

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MMBT8050W 数据手册

MMBT8050W

NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Unit

600

Collector Current

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 1 V, I_C= 100 mA

MMBT8050CW

MMBT8050DW

h_FE

100

160

250

400

at V_CE= 1 V, I_C= 500 mA

Collector Cutoff Current

at V_CB= 35 V

Collector Saturation Voltage

at I_C= 500 mA, I_B= 50 mA

Base Saturation Voltage

at I_C= 500 mA, I_B= 50 mA

Collector Emitter Breakdown Voltage

at I_C= 2 mA

Collector Base Breakdown Voltage

at I_C= 10 µA

Emitter Base Breakdown Voltage

at I_E= 100 µA

Gain Bandwidth Product

at V_CE= 5 V, I_C= 10 mA, f = 50 MHz

Collector Base Capacitance

at V_CB= 10 V, f = 1 MHz

I_CBO

V_CE(sat)

V_BE(sat)

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

f_T

100

0.5

1.2

100

MHz

C_CBO

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 11/08/2006

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