Datasheet > MMBT8050LT1

MMBT8050LT1

更新时间： 2024-09-30 12:36:43

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
2页	164K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

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数据手册

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MMBT8050LT1 数据手册

RoHS

M M B T 8 0 5 0 L T 1

NPN EPITAXIAL SILICON TRANSISTOR

SOT-23

2W OUTPUT AMPLIFIER OF PORTABLE

RADIOS IN CLASS

B PUSH-PULL OPERATION

Complement to MMPT8550LT1

Collector Current:Ic=500mA

Collector Dissipation:Pc=225mW(Tc=25^oC)

1.BASE

2.EMITTER

2.4

1.3

3.COLLECTOR

Unit:mm

(Ta=25^oC)

ABSOLUTE MAXIMUM RATINGS

Symbol

Rating

Unit

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

EBO

Emitter-Base Voltage

Collector Current

Collector Dissipation Ta=25^oC*

Junction Temperature

Storage Temperature

500

225

150

-55-150

^OC

stg

(Ta=25^oC)

Electrical Characteristics

Characteristic

Symbol MIN. TYP. MAX. Unit

Test Conditions

=100uA I =0

=1mA I =0

=100uA I =0

CB=35V, I =0

BVCBO

BVCEO

BVEBO

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage#

Emitter-Base Breakdown Voltage

Collector Cutoff Current

CBO

100

EBO

Emitter Cutoff Current

EB=6V, I

CE=1V, I

FE1

FE2

FE3

DC Current Gain

=5mA

160

DC Current Gain

=50mA

=500mA

300

DC Current Gain

0.5

1.2

CE(sat)

BE(sat)

0.28

0.98

0.66

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

=500mA, I

=50mA

CE=1V, I

=10mA

=0,f=1MHz

Output Capacitance

CB=10V, I

WEJ ELECTRONIC CO.,LTD

Current Gain-Bandwidth Product

190

MHz

100

CE=10V, I =50mA

*Total Device Dissipation:FR=1X0.75X0.062 in Board ,Derate 25^oC

^#Pulse Test: Pulse Width 300uS ,Duty cycle 2%

MMBT8050LT1=A6

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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