Datasheet > MMBT5551

MMBT5551

更新时间： 2024-09-29 17:15:39

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友台半导体 - UMW		/
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描述
三极管

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数据手册

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MMBT5551 数据手册

UMW

UMW MMBT5551

SOT-23 Plastic-Encapsulate Transistors

MMBT5551

TRANSISTOR (NPN)

SOT–23

FEATURES

Complementary to MMBT5401

Ideal for Medium Power Amplification and Switching

1. BASE

MARKING: G1

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

180

Collector-Emitter Voltage

Emitter-Base Voltage

160

Collector Current

600

℃/W

℃

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

300

R_ΘJA

T_j

416

150

T_stg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

I_C=100µA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

180

160

V_(BR)CEO

I_C=1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=10µA, I_C=0

V_CB=120V, I_E=0

Emitter cut-off current

I_EBO

V_EB=4V, I_C=0

h_FE(1)

V_CE=5V, I_C=1mA

V_CE=5V, I_C=10mA

V_CE=5V, I_C=50mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

V_CE=10V,I_C=10mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

100

DC current gain

h_FE(2)

300

h_FE(3)

V_CE(sat)1

0.15

0.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

Transition frequency

f_T

100

300

MHz

Collector output capacitance

C_ob

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

CLASSIFICATION OF h_{FE (2)}

RANK

RANGE

100-200

200-300

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MMBT5551_NL	FAIRCHILD	获取价格	暂无描述
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