Datasheet > MMBT5551

MMBT5551

更新时间： 2023-12-06 20:10:17

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	754K
描述
SOT-23

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中文翻译

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数据手册

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MMBT5551 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBT5551

TRANSISTOR (NPN)

SOT–23

FEATURES

Complementary to MMBT5401

Ideal for Medium Power Amplification and Switching

MARKING: G1

1. BASE

G1=Device code

Solid dot = Green molding compound

device,if none,the normal device.

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

180

160

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

600

300

416

℃/W

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

I_C=100µA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

180

160

V_(BR)CEO

I_C=1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=10µA, I_C=0

V_CB=120V, I_E=0

Emitter cut-off current

I_EBO

V_EB=4V, I_C=0

h_FE(1)

V_CE=5V, I_C=1mA

V_CE=5V, I_C=10mA

V_CE=5V, I_C=50mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

V_CE=10V,I_C=10mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

100

DC current gain

h_FE(2)

300

h_FE(3)

V_CE(sat)1

0.15

0.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

Transition frequency

f_T

100

300

MHz

Collector output capacitance

C_ob

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

CLASSIFICATION OF h_{FE (2)}

RANK

RANGE

100-200

200-300

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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与MMBT5551相关器件

型号	品牌	获取价格	描述	数据表
MMBT5551/S62Z	TI	获取价格	200mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT5551_07	DIOTEC	获取价格	Surface Mount General Purpose Si-Epi-Planar Transistors
MMBT5551_08	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT5551_1	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT5551_10	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5551_11	MCC	获取价格	NPN Plastic Encapsulate Transistor
MMBT5551_15	KEXIN	获取价格	NPN Transistors
MMBT5551_15	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5551_NL	FAIRCHILD	获取价格	暂无描述
MMBT5551-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI