Datasheet > MMBT5551

MMBT5551

更新时间： 2023-12-06 20:00:09

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	782K
描述
小信号晶体管

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数据手册

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MMBT5551 数据手册

MMBT5551

NPN Silicon Epitaxial Planar Transistor

Features

• Low Collector Emitter Saturation Voltage

1.Base 2.Emitter 3.Collector

SOT-23 Plastic Package

Applications

• High voltage amplifier

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

180

160

600

Power Dissipation

P_tot

350

Operating Junction and Storage Temperature Range

T_j,T_stg

- 55 to +150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

357

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 10/11/2022 Rev: 05

12 3 4 5

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与MMBT5551相关器件

型号	品牌	获取价格	描述	数据表
MMBT5551/S62Z	TI	获取价格	200mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT5551_07	DIOTEC	获取价格	Surface Mount General Purpose Si-Epi-Planar Transistors
MMBT5551_08	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT5551_1	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT5551_10	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5551_11	MCC	获取价格	NPN Plastic Encapsulate Transistor
MMBT5551_15	KEXIN	获取价格	NPN Transistors
MMBT5551_15	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5551_NL	FAIRCHILD	获取价格	暂无描述
MMBT5551-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI