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MMBT5401-L PDF预览

MMBT5401-L

更新时间: 2024-02-04 15:09:07
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2页 1170K
描述
PNP Transistors

MMBT5401-L 数据手册

 浏览型号MMBT5401-L的Datasheet PDF文件第2页 
SMD Type  
SMD Type  
Transistors  
PNP Transistors  
MMBT5401 (KMBT5401)  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High Voltage Transistors  
Pb-Free Packages are Available  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-160  
Unit  
V
Collector-emitter voltage  
-150  
V
Emitter-base voltage  
-5  
V
Collector current-continuous  
Collector Power Dissipation  
Junction and storage temperature  
-0.6  
A
Pc  
300  
mW  
TJ, Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditions  
IC = -100 A, IE = 0  
Min  
-160  
-150  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
Collector cutoff current  
VCBO  
VCEO  
VEBO  
ICBO  
IC =- 1.0 mA, IB = 0  
V
V
IE = -10 A, IC = 0  
VCB =- 120 V, IE = 0  
VEB = -4.0 V, IC = 0  
IC = -1.0 mA, VCE = -5 V  
IC = -10 mA, VCE = -5 V  
IC = -50 mA, VCE = -5 V  
-0.1  
-0.1  
A
Emitter cutoff current  
IEBO  
A
80  
100  
50  
DC current gain *  
hFE  
300  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
VCE(sat) IC = -50 mA, IB = -5.0 mA  
VBE(sat) IC = -50 mA, IB = -5.0 mA  
-0.5  
-1.0  
V
V
Transiston frequency  
fT  
VCE=-5V,IC=-10mA,f=30MHz  
100  
MHz  
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.  
Classification of hfe(2)  
Type  
Range  
Marking  
MMBT5401  
100-300  
MMBT5401-L  
100-200  
2L  
MMBT5401-H  
200-300  
1
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