Datasheet > MMBT5401

MMBT5401

更新时间： 2024-04-09 19:01:47

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
5页	1312K
描述
三极管

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中文翻译

获取价格

数据手册

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MMBT5401 数据手册

MMBT5401

GOOD-ARK Electronics

SOT-23 Plastic-Encapsulate Transistors

Features

● Complementary to MMBT5551.

● 300mW; Power Dissipation of 300mW

● High Stability and High Reliability

RoHS

COMPLIANT

Marking: 2L

SOT-23

Mechanical Data

● SOT-23 Small Outline Plastic Package

● Epoxy UL: 94V-0

Pin definition

● Mounting Position: Any

Maximum Ratings & Electrical Characteristics(TA=25℃ unless otherwise noted)

Parameter

Symbol

Value

-160

-150

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter -Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-600

300

Collector Current-Continuous

P_C

Collector Power Dissipation

Operating junction temperature range

Storage temperature range

150

°C

T_STG

RθJA

-55 to +150

416

Thermal Resistance from Junction to Ambient

℃/W

Electrical Specifications(TA=25℃ unless otherwise noted)

Limits

Parameter

Symbol

Test Conditions

Unit

Min

Max

-160

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

(BR)CBO

IC=-100uA, IE=0

-150

-5

V(BR)CEO

IC=-1mA, IB=0

IE=-10uA, IC=0

VCB=-120V, IE=0

VEB=-4V, IC=0

(BR)EBO

ICBO

-100

IEBO

Emitter cut-off current

hFE(1)

hFE(2)

hFE(3)

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

VCE=-5V, IC=-1mA

VCE=-5V, IC=-10mA

VCE=-5V, IC=-50mA

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

VCE=-5V, IC=10mA,f=30MHz

100

300

DC current gain

-0.2

-0.5

-1.00

Collector-emitter saturation voltage

Base -emitter saturation voltage

Transition frequency

100

MHz

≤ 300us, duty cycle

*Pulse test: pulse width

≤2.0%

Classlslcatlon OF

hFE(2)

HFE

100-300

RANK

RANGE

100-200

200-300

Doc.No.643141

www.goodark.com

12 3 4 5

中文翻译

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