MMBT4403M3T5G
PNP Switching Transistor
The MMBT4403M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
switching applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
http://onsemi.com
Features
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol Value
Unit
Vdc
V
CEO
V
CBO
−40
−40
2
EMITTER
Vdc
V
−5.0
−600
Vdc
EBO
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
MARKING
DIAGRAM
3
Symbol
Max
Unit
SOT−723
CASE 631AA
STYLE 1
AG M
Total Device Dissipation
FR−5 Board (Note 1)
P
D
mW
265
2.1
2
mW/°C
1
T = 25°C
A
Derate above 25°C
AG
= Specific Device Code
= Date Code
Thermal Resistance,
Junction−to−Ambient
R
q
JA
470
°C/W
M
Total Device Dissipation
Alumina Substrate, (Note 2) T = 25°C
Derate above 25°C
P
640
5.1
mW
mW/°C
°C/W
D
A
ORDERING INFORMATION
Thermal Resistance,
R
q
195
JA
†
Device
Package
Shipping
Junction−to−Ambient
MMBT4403M3T5G
SOT−723 8000/Tape & Reel
(Pb−Free)
Junction and Storage Temperature
T , T
−55 to
+150
°C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
January, 2009 − Rev. 0
MMBT4403M3/D