MMBT4403LT1S

更新时间： 2024-09-25 13:11:43

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体开关小信号双极晶体管
页数	文件大小	规格书
8页	303K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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MMBT4403LT1S 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.79
Is Samacsys：	N	Base Number Matches：	1

MMBT4403LT1S 数据手册

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by MMBT4403LT1/D

SEMICONDUCTOR TECHNICAL DATA

COLLECTOR

PNP Silicon

Motorola Preferred Device

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

Value

–40

Unit

Vdc

CEO

CBO

EBO

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

–40

Vdc

Emitter–Base Voltage

–5.0

–600

Vdc

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

MMBT4403LT1 = 2T

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(3)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = –1.0 mAdc, I = 0)

–40

–5.0

—

Collector–Base Breakdown Voltage

(I = –0.1 mAdc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

Vdc

(BR)EBO

(I = –0.1 mAdc, I = 0)

—

Base Cutoff Current

µAdc

BEV

CEX

= –35 Vdc, V

= –0.4 Vdc)

–0.1

Collector Cutoff Current

(V = –35 Vdc, V

= –0.4 Vdc)

—

CE EB

1. FR–5 = 1.0

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width 300 s, Duty Cycle

0.75 0.062 in.

2.0%.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6 7 8

中文翻译

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