Datasheet > MMBT4401

MMBT4401

更新时间： 2024-09-24 22:20:35

品牌	Logo	应用领域
智威 - ZOWIE		晶体开关晶体管光电二极管
页数	文件大小	规格书
6页	127K
描述
SWITCHING TRANSISTOR NPN SILICON

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中文翻译

获取价格

数据手册

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MMBT4401 数据手册

Zowie Technology Corporation

Switching Transistor

NPN Silicon

COLLECTOR

BASE

MMBT4401

EMITTER

SOT-23

MAXIMUM RATINGS

Value

Symbol

VCEO

VCBO

VEBO

Unit

Vdc

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Vdc

Emitter-Base Voltage

6.0

Vdc

Collector Current-Continuous

600

mAdc

THERMAL CHARACTERISTICS

Max.

Symbol

Unit

Characteristic

Total Device Dissipation FR-5 Board⁽¹⁾TA=25^oC

225

1.8

Derate above 25^oC

mW / ^oC

Thermal Resistance Junction to Ambient

556

^oC / W

Total Device Dissipation Alumina Substrate,⁽²⁾TA=25^oC

300

2.4

Derate above 25^oC

mW / ^oC

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

417

^oC / W

^oC

TJ,TSTG

-55 to +150

DEVICE MARKING

MMBT4401=2X

ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)

Symbol

Max.

Min.

Unit

Vdc

Characteristic

OFF CHARACTERISTICS

(3)

Collector-Emitter Breakdowe Voltage

( IC=1.0mAdc, IB=0 )

V(BR)CEO

Collector-Base Breakdowe Voltage

( IC=0.1 mAdc, IE=0 )

V(BR)CBO

V(BR)EBO

Vdc

Emitter-Base Breakdowe Voltage

( IE=0.1 mAdc, IC=0 )

6.0

Base Cutoff Current

( VCE=35 Vdc, VEB=0.4 Vdc )

IBEV

ICEX

0.1

nAdc

Collector Cutoff Current

( VCE=35 Vdc, VEB=0.4 Vdc )

REV. : 0

Zowie Technology Corporation

12 3 4 5 6

中文翻译

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