MMBT4401
BIPOLAR TRANSISTOR (NPN)
FEATURES
Complementary to MMBT4403
Switching Transistor
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
IC
PC
RθJA
TJ
Value
60
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
40
6
600
300
417
150
V
V
mA
mW
°C/W
°C
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
TSTG
-55 ~+150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
60
40
6
V
IC=100uA,IE=0
IC=1mA,IB=0
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
,
I =100uA I =0
E C
ICBO
ICEX
IEBO
hFE1
hFE2
hFE3
hFE4
hFE5
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
0.1
0.1
0.1
uA
uA
uA
VCB=50V, IE=0
VCE=35V, VBE=0.4V
VEB=5V, IC=0
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
VCE=10V,IC=20mA,f=100
VCC=30V, VBE(OFF)=2V,
IC=150mA,IB1=15mA
20
40
80
100
40
DC current gain
300
0.4
0.75
0.95
1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
Transition frequency
Delay time
Rise time
Storage time
Fall time
250
MHz
ns
ns
ns
ns
MHz
td
tr
tS
tf
15
20
225
60
VCC=30V,IC=150mA
IB1=IB2=15mA
CLASSIFICATION OF hFE
Range
100-300
2X
Marking
1 / 4
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