Datasheet > MMBT4401

MMBT4401

更新时间： 2024-09-26 14:55:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	702K
描述
SOT-23

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中文翻译

获取价格

数据手册

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MMBT4401 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBT4401 TRANSISTOR (NPN)

SOT–23

FEATURES

z Switching Transistor

MARKING:2X

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

1. BASE

Collector-Base Voltage

2. EMITTER

3. COLLECTOR

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

600

300

417

℃/W

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

R_ΘJA

Operation Junction and

Storage Temperature Range

℃

T_J,T_stg

-55～+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=100μA ,I_C=0

I_CBO

I_CEX

I_EBO

h_FE1

h_FE2

h_FE3

h_FE4

h_FE5

V_CB=50V,I_E=0

0.1

μA

Collector cut-off current

V^CE=35V, V^EB=0.4V

V_EB=5V,I_C=0

Emitter cut-off current

V_CE=1V, I_C=0.1mA

V_CE=1V, I_C=1mA

DC current gain

V_CE=1V, I_C=10mA

V_CE=1V, I_C=150mA

V_CE=2V, I_C=500mA

I_C=150mA,I_B=15mA

I_C=500mA,I_B=50mA

I_C=150mA,I_B=15mA

I_C=500mA,I_B=50mA

V_CE=10V, I_C=20mA,f =100MHz

V^CC=30V, V^BE(off)=-2V

I^C=150mA , IB1=15mA

V^CC=30V, I^C=150mA

I^B1=I^B2=15mA

100

300

0.4

0.75

0.95

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat

）

Transition frequency

Delay time

f_T

t_d

t_r

250

MHz

Rise time

Storage time

Fall time

t_s

t_f

225

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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