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MMBT3906K PDF预览

MMBT3906K

更新时间: 2024-09-23 22:54:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 59K
描述
PNP Epitaxial Silicon Transistor

MMBT3906K 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SOT-23, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.01Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):300 ns
最大开启时间(吨):70 nsBase Number Matches:1

MMBT3906K 数据手册

 浏览型号MMBT3906K的Datasheet PDF文件第2页浏览型号MMBT3906K的Datasheet PDF文件第3页浏览型号MMBT3906K的Datasheet PDF文件第4页 
February 2005  
MMBT3906K  
PNP Epitaxial Silicon Transistor  
General Purpose Transistor  
Marking  
3
2AK  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
-40  
Units  
V
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCEO  
VEBO  
IC  
-40  
V
-5  
V
-200  
350  
150  
mA  
mW  
°C  
PC  
Collector Power Dissipation  
Storage Temperature  
TSTG  
Electrical Characteristics Ta=25°C unless otherwise noted  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICEX  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage *  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
-40  
-40  
-5  
Max. Units  
IC = -10µA, IE = 0  
V
V
V
IC = -1.0mA, IB = 0  
IE = 10µA, IC = 0  
VCE = -30V, VEB = -3V  
-50  
nA  
hFE  
DC Current Gain *  
VCE = -1V, IC = -0.1mA  
VCE = -1V, IC = -1mA  
60  
80  
V
V
CE = -1V, IC = -10mA  
CE = -1V, IC = -50mA  
100  
60  
300  
VCE = -1V, IC = -100mA  
30  
V
V
CE (sat)  
BE (sat)  
Collector-Emitter Saturation Voltage *  
Base-Emitter Saturation Voltage *  
IC = -10mA, IB = -1mA  
IC = -50mA, IB = -5.0mA  
-0.25  
-0.4  
V
V
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
-0.65  
250  
-0.85  
-0.95  
V
V
fT  
Current Gain Bandwidth Product  
Output Capacitance  
Noise Figure  
IC = -10mA, VCE = -20V, f = 100MHz  
VCB= -5V, IE=0, f=1.0MHz  
MHz  
pF  
Cob  
NF  
4.5  
4
I
C = -100µA, VCE = -5V, RS = 1KΩ  
dB  
f = 10Hz to 15.7KHz  
tON  
Turn On Time  
Turn Off Time  
VCC = -3V, VBE = -0.5V  
70  
ns  
ns  
I
C = -10mA, IB1 = -1mA  
tOFF  
VCC = -3V, IC = -10mA, IB1 = IB2 = -1mA  
300  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
©2005 Fairchild Semiconductor Corporation  
MMBT3906K Rev. A  
1
www.fairchildsemi.com  

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型号 品牌 替代类型 描述 数据表
KST3906MTF FAIRCHILD

完全替代

PNP Epitaxial Silicon Transistor
MMBT3906 FAIRCHILD

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PNP General Purpose Amplifier
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