Datasheet > MMBT3906-H

MMBT3906-H

更新时间： 2024-09-24 01:12:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1273K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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MMBT3906-H 数据手册

SMD Type

Transistors

PNP Transistors

MMBT3906 (KMBT3906)

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

Features

+0.02

-0.02

+0.1

-0.1

0.15

0.95

● Complementary toMMBT3904

+0.1

-0.2

1.9

●

Marking: 2A

1. Base

2. Emitter

3. Collector

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-40

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

-40

-5

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

-0.2

P^C

0.2

150

℃

Storage Temperature range

T^stg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

-40

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector- emittercut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I

E=0

C=0

CBO

CEX

EBO

CB= -40 V , I

-100

-50

CE=- 30 V , VEB(off^）=3V

EB= -5V , I =0

-100

-0.2

=-10 mA, I

=- 1mA

= -5mA

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-50 mA, I

-0.3

= -10 mA, I

= -50 mA, I

= -1mA

= -5mA

-0.65

-0.85

-0.95

300

CE= -1V, I

C= -10mA

C=-50mA

C=-100mA

100

hfe（1）

hfe（2）

hfe（3）

DC current gain

Delay time

CC=-3.0V,VBE=0.5V

=-10mA,IB1=-1.0mA

Rise time

Storage time

CC=-3.0V,I

C=-10mA

225

Fall time

IB1=IB2=-1.0mA

Collector input capacitance

EB= -0.5V, I

CB= -5V, I = 0,f=1MHz

CE= -20V, I = -10mA,f=100MHz

= 0,f=1MHz

4.5

Collector output capacitance

Transition frequency

Cob

250

MHz

■ Classification of hfe(1)

MMBT3906-L MMBT3906-H

100-200 200-300

Type

MMBT3906

Range

100-300

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