Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
Lead free product
COLLECTOR
3
3
BASE
1
1
2
MMBT3904G
2
EMITTER
SOT-23
MAXIMUM RATINGS
Value
Symbol
VCEO
VCBO
VEBO
IC
Unit
Vdc
Rating
Collector-Emitter Voltage
Collector-Base Voltage
40
60
Vdc
Emitter-Base Voltage
6.0
200
Vdc
Collector Current-Continuous
mAdc
THERMAL CHARACTERISTICS
Max.
Symbol
PD
Unit
Characteristic
Total Device Dissipation FR-5 Board(1) TA=25oC
225
1.8
mW
Derate above 25oC
mW / oC
Thermal Resistance Junction to Ambient
R
JA
556
oC / W
Total Device Dissipation Alumina Substrate,(2) TA=25oC
300
2.4
mW
Derate above 25oC
PD
mW / oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R
JA
417
oC / W
oC
TJ,TSTG
-55 to +150
DEVICE MARKING
MMBT3904=1AM
ELECTRICAL CHARACTERISTICS (TA
=25oC unless otherwise noted)
Max.
Symbol
Min.
40
Unit
Vdc
Characteristic
OFF CHARACTERISTICS
(3)
Collector-Emitter Breakdowe Voltage
V(BR)CEO
-
( IC=1.0mAdc, IB=0 )
Collector-Base Breakdowe Voltage
( IC=10 uAdc, IE=0 )
V(BR)CBO
V(BR)EBO
60
-
-
Vdc
Vdc
Emitter-Base Breakdowe Voltage
( IE=10 uAdc, IC=0 )
6.0
Base Cutoff Current
( VCE=30 Vdc, VEB=3.0 Vdc )
IBL
-
-
50
50
nAdc
nAdc
Collector Cutoff Current
( VCE=30 Vdc, VEB=3.0 Vdc )
ICEX
REV. 0
Zowie Technology Corporation