是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.12 |
其他特性: | HIGH SPEED SATURATED SWITCHING | 最大集电极电流 (IC): | 0.2 A |
集电极-发射极最大电压: | 15 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.35 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 500 MHz |
最大关闭时间(toff): | 18 ns | 最大开启时间(吨): | 12 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MMBT2369LT1G | ONSEMI |
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MMBT2369ALT1G | ONSEMI |
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MMBT2369ALT1 | MOTOROLA |
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MMBT2369ALT1 | ONSEMI |
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MMBT2369ALT1 | LRC |
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MMBT2369ALT1G | ONSEMI |
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MMBT2369ALT1G | ROCHESTER |
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200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, C |
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MMBT2369ALT3 | MOTOROLA |
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200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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MMBT2369ALT3G | ONSEMI |
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NPN 双极晶体管 |
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MMBT2369AW | SWST |
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MMBT2369L | ONSEMI |
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