5秒后页面跳转
MMBT2369A_NL PDF预览

MMBT2369A_NL

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
14页 507K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon

MMBT2369A_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.12
其他特性:HIGH SPEED SATURATED SWITCHING最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):500 MHz
最大关闭时间(toff):18 ns最大开启时间(吨):12 ns
Base Number Matches:1

MMBT2369A_NL 数据手册

 浏览型号MMBT2369A_NL的Datasheet PDF文件第2页浏览型号MMBT2369A_NL的Datasheet PDF文件第3页浏览型号MMBT2369A_NL的Datasheet PDF文件第4页浏览型号MMBT2369A_NL的Datasheet PDF文件第5页浏览型号MMBT2369A_NL的Datasheet PDF文件第6页浏览型号MMBT2369A_NL的Datasheet PDF文件第7页 
PN2369A  
MMBT2369A  
C
E
TO-92  
C
B
SOT-23  
Mark: 1S  
B
E
NPN Switching Transistor  
This device is designed for high speed saturated switching at collector  
currents of 10 mA to 100 mA. Sourced from Process 21.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
15  
40  
V
V
4.5  
V
Collector Current - Continuous  
200  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN2369A  
MMBT2369A*  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

MMBT2369A_NL 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2369LT1G ONSEMI

功能相似

Switching Transistors NPN Silicon
MMBT2369ALT1G ONSEMI

功能相似

Switching Transistors NPN Silicon
MMBT6429LT1G ONSEMI

功能相似

Amplifier Transistors NPN Silicon

与MMBT2369A_NL相关器件

型号 品牌 获取价格 描述 数据表
MMBT2369ALT1 MOTOROLA

获取价格

Switching Transistors
MMBT2369ALT1 ONSEMI

获取价格

Switcing Transistors
MMBT2369ALT1 LRC

获取价格

Switching Transistors(NPN Silicon)
MMBT2369ALT1G ONSEMI

获取价格

Switching Transistors NPN Silicon
MMBT2369ALT1G ROCHESTER

获取价格

200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, C
MMBT2369ALT3 MOTOROLA

获取价格

200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2369ALT3G ONSEMI

获取价格

NPN 双极晶体管
MMBT2369AW SWST

获取价格

小信号晶体管
MMBT2369-G COMCHIP

获取价格

GENERAL PURPOSE TRANSISTORS
MMBT2369L ONSEMI

获取价格

Switcing Transistors