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MMBT2222AE PDF预览

MMBT2222AE

更新时间: 2024-11-12 10:52:43
品牌 Logo 应用领域
江苏长电/长晶 - CJ 晶体晶体管
页数 文件大小 规格书
4页 214K
描述
TRANSISTOR

MMBT2222AE 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

MMBT2222AE 数据手册

 浏览型号MMBT2222AE的Datasheet PDF文件第2页浏览型号MMBT2222AE的Datasheet PDF文件第3页浏览型号MMBT2222AE的Datasheet PDF文件第4页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD  
WBFBP-03A Plastic-Encapsulate Transistors  
C
MMBT2222AE  
TRANSISTOR  
WBFBP-03A  
(1.6×1.6×0.5)  
TOP  
unit: mm  
DESCRIPTION  
NPN Epitaxial planar Silicon Transistor  
B
E
E
B
FEATURES  
C
1. BASE  
Complementary PNP Type available (MMBT2907AE)  
2. EMITTER  
3. COLLECTOR  
BACK  
PPLICATION  
general purpose amplifier, switching.  
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,  
DVD-ROM, Note book PC, etc.)  
MARKING:1P  
C
1P  
B E  
MAXIMUM RATINGS TA=25unless otherwise noted  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
75  
Units  
V
V
V
mA  
mW  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current -Continuous  
Collector Dissipation  
40  
6
600  
150  
PC  
TJ  
Tstg  
Junction Temperature  
Storage Temperature  
150  
-55to+150  
ELECTRICAL CHARACTERISTICSTamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
75  
40  
6
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 10μA,IE=0  
IC= 10mA, IB=0  
V
V
IE=10μA,IC=0  
VCB=70 V,IE=0  
0.1  
0.1  
0.1  
μA  
μA  
μA  
Collector cut-off current  
ICEX  
VCE=60V,VBE(off)=3V  
VEB= 3V,IC=0  
Emitter cut-off current  
IEBO  
hFE(1)  
VCE=10V,IC= 0.1mA  
VCE=10V,IC= 1mA  
VCE=10V,IC= 10mA  
VCE=10V,IC= 150mA  
VCE=10V,IC= 500mA  
35  
50  
hFE(2)  
DC current gain  
hFE(3)  
75  
hFE(4)  
100  
40  
400  
hFE(5)  
IC=500mA,IB= 50mA  
IC=150mA,IB=15mA  
IC=500mA,IB= 50mA  
IC=150mA,IB=15mA  
1
0.3  
2
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
V
V
1.2  
V
CE=20V, IC= 20mA  
Transition frequency  
300  
MHz  
pF  
fT  
f=100MHz  
Collector output capacitance  
8
4
Cob  
NF  
VCB=10V, IE=0, f=1MHz  
VCB=10V,Ic=0.1mA,  
f=1KHz,Rs=1K  
Noise figure  
dB  

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