Datasheet > MMBT2222A

MMBT2222A

更新时间： 2024-11-06 14:55:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	824K
描述
SOT-23

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数据手册

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MMBT2222A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

MMBT2222A

TRANSISTOR (NPN)

1. BASE

FEATURES

2.EMITTER

3.COLLECTOR

Epitaxial planar die construction

Complementary PNP Type available(MMBT2907A)

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Parameter

Value

Unit

Symbol

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Thermal Resistance, Junction to Ambient

Operation Junction and Storage

Temperature Range

600

300

417

℃/W

V_CBO

V_CEO

V_EBO

I_C

P_C

R_Θ

-55~+150

℃

T_J,Tstg

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

rameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C= 10μA, I_E=0

I_C= 10mA, I_B=0

I_E=10μA, I_C=0

V_CB=60V, I_E=0

V_(BR)CEO

V_(BR)EBO

I_CBO

0.01

0.1

μA

Collector cut-off current

I_CEX

V_CE=30V,V_EB(off)=3V

V_EB= 3V, I_C=0

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=10V, I_C= 150mA

V_CE=10V, I_C= 0.1mA

V_CE=10V, I_C= 500mA

100

300

DC current gain

h_FE(2)

h_FE(3)

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

V_CE=20V, I_C= 20mA,

f=100MHz

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

0.3

2.0

1.2

V_BE(sat)

f_T

300

MHz

Delay time

Rise time

t_d

t_r

V_CC=30V, V_BE(off)=-0.5V

I_C=150mA , I_B1= 15mA

Storage time

t_S

t_f

225

V_CC=30V, I_C=150mA

I_B1=-I_B2=15mA

Fall time

*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.

CLASSIFICATION OF h_FE(1)

RANK

RANGE

100–200

200–300

MARKING

www.jscj-elec.com

Rev. - 2.0

12 3 4

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