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MMBT2222A PDF预览

MMBT2222A

更新时间: 2024-11-01 12:32:55
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关光电二极管IOT
页数 文件大小 规格书
2页 124K
描述
Epitaxial planar die construction

MMBT2222A 数据手册

 浏览型号MMBT2222A的Datasheet PDF文件第2页 
Product specification  
MMBT2222A  
SOT-23  
Unit: mm  
+0.1  
2.9-0.1  
+0.1  
0.4-0.1  
3
Features  
Epitaxial planar die construction.  
1
2
Complementary PNP type available(MMBT2907A)  
+0.1  
+0.05  
0.95-0.1  
0.1-0.01  
+0.1  
1.9-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
75  
Collector-emitter voltage  
40  
6
V
Emitter-base voltage  
V
Collector current  
600  
mA  
mW  
/W  
Power dissipation  
PD  
250  
Thermal resistance from junction to ambient  
Operating and Storage and Temperature Range  
RθJA  
500  
Tj, TSTG  
-55 to +150  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  

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