Datasheet > MMBT2222

MMBT2222

更新时间： 2024-11-01 18:09:51

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描述
NPN Transistor

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中文翻译

获取价格

数据手册

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MMBT2222 数据手册

SMD Type

Transistors

NPN General Purpose Amplifier

MMBT2222

SOT-23

Unit: mm

+0.1

2.9_-0.1

+0.1

0.4_-0.1

■ Features

● Epitaxial planar die construction.

● Complementary PNP type available(MMBT2907)

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

600

℃/W

℃

Power dissipation

250

Thermal resistance from junction to ambient

Operating and Storage and Temperature Range

RθJA

500

Tj, TSTG

-55 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditions

Min

Typ Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector cutoff current

V(BR)CBO IC = 10 μA, IE = 0

V(BR)CEO IC = 10 mA, IB = 0

V(BR)EBO IC = 10 μA, IC = 0

ICBO

IEBO

VCB=50V, IE=0

Emitter cutoff current

VEB= 3V, IC=0

100

VCE=10V, IC= 0.1mA

VCE=10V, IC= 150mA

VCE=10V, IC= 500mA

100

DC current gain

hFE

300

0.4

1.6

1.3

2.6

IC = 150 mA; IB = 15 mA

IC = 500 mA; IB = 50 mA

IC = 150 mA; IB = 15 mA

IC = 500 mA; IB = 50 mA

collector-emitter saturation voltage *

base-emitter saturation voltage *

VCE(sat)

VBE(sat)

Transition frequency

Delay time

Rise time

250

MHz

IC = 20 mA; VCE = 20 V; f = 100 MHz

VCC=30V, VBE(off)=-0.5V,

IC=150mA , IB1= 15mA

Storage time

Fall time

225

VCC=30V, IC=150mA,IB1=-IB2=15mA

* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.

■ Marking

Marking

M1B

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