Datasheet > MMBT2222

MMBT2222

更新时间： 2024-11-01 18:06:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	507K
描述
SOT-23

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中文翻译

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数据手册

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MMBT2222 数据手册

MMBT2222A

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to MMBT2907A

 Epitaxial planar die construction

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

600

°C/W

°C

300

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

417

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =10uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

，

V(BR)CEO

V(BR)EBO

I_CBO

I =10mA I =0

，

I =10uA I =0

E C

V_CB=60V, I_E=0

0.01

0.1

Collector cut-off current

V_CE=30V, V_BE(OFF)=3V

V_EB=3V, I_C=0

I_CEX

Emitter cut-off current

I_EBO

h_FE1

h_FE2

h_FE3

V_CE(sat)

V_BE(sat)

f_T

V_CE=10V, I_C=150mA

V_CE=10V, I_C=0.1mA

V_CE=10V, I_C=500mA

I_C=500mA，I_B=50mA

I_C=150mA，I_B=15mA

I_C=500mA，I_B=50mA

I_C=150mA，I_B=15mA

V_CE=20V,I_C=20mA,f=100

V_CC=30V, V_BE(OFF)=0.5V,

I_C=150mA，I_B1=15mA

100

300

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.3

2.0

1.2

Transition frequency

Delay time

150

MHz

t_d

t_r

Rise time

Storage time

t_S

225

V_CC=30V,I_C=150mA

I_B1=I_B2=15mA

Fall time

t_f

CLASSIFICATION OF h_FE

Rank

Range

Marking

200-300

100-200

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