Datasheet > MMBT2222

MMBT2222

更新时间： 2024-09-14 14:55:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	729K
描述
SOT-23

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中文翻译

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数据手册

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MMBT2222 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBT2222 TRANSISTOR (NPN)

SOT–23

FEATURES

 Genernal Purpose Amplifier

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

1. BASE

Collector-Base Voltage

2. EMITTER

3. COLLECTOR

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

600

250

500

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=10µA, I_E=0

V_(BR)CEOI_C=10mA, I_B=0

V_(BR)EBOI_E=10µA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_CEX

V_CB=60V, I_E=0

µA

V_CE=30V, V_EB(off)=3V

V_EB=3V, I_C=0

Collector cut-off current

Emitter cut-off current

I_EBO

0.1

300

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=10V, I_C=150mA

V_CE=10V, I_C=0.1mA

V_CE=10V, I_C=500mA

I_C=500mA, I_B=50mA

I_C=150mA, I_B=15mA

I_C=500mA, I_B=50mA

V_CE=20V,I_C=20mA, f=100MHz

V_CC=30V, V_BE(off)=-0.5V I_C=150mA,

I_B1=15mA

100

DC current gain

V_CE(sat)1

V_CE(sat)2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay time

0.3

1.2

V_BE(sat)

f_T

t_d

t_r

300

MHz

Rise time

t_s

t_f

225

Storage time

V_CC=30V, I_C=150mA, I_B1= I_B2=15mA

Fall time

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

CLASSIFICATION OF h_FE(1)

RANK

RANGE

100–200

200–300

MARKING

M1B

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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