MMBT2222

更新时间： 2024-10-31 04:39:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体放大器晶体管光电二极管
页数	文件大小	规格书
4页	50K
描述
NPN General Purpose Amplifier

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MMBT2222 数据手册

MMBT2222

NPN General Purpose Amplifier

•

Sourced from process 19.

SOT-23

Mark: 1B

Absolute Maximum Ratings* T =25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

CEO

CBO

EBO

5.0

- Continuous

0.6

T , T

Operating and Storage Junction Temperature Range

-55 ~ 150

°C

STG

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics T =25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

Collector-Emitter Breakdown Voltage *

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

= 10mA, I = 0

(BR)CEO

(BR)CBO

(BR)EBO

CBO

= 10µA, I = 0

5.0

= 50V, I = 0

µA

= 50V, I = 0, T = 125°C

Emitter Cutoff Current

= 3.0V, I = 0

EBO

On Characteristics

DC Current Gain

= 0.1mA, V = 10V

100

= 1.0mA, V = 10V

= 10mA, V = 10V

= 150mA, V = 10V *

300

= 150mA, V = 1.0V *

= 500mA, V = 10V *

Collector-Emitter Saturation Voltage *

Base-Emitter Saturation Voltage

= 150mA, I = 15V

0.4

1.6

CE(sat)

BE(sat)

= 500mA, I = 50V

= 150mA, I = 15V

1.3

2.6

= 500mA, I = 50V

Rev. B, May 2004

12 3 4

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MMBT2222 替代型号

型号	品牌	替代类型	描述	数据表
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