MMBT2132T3

更新时间： 2024-09-12 22:51:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
4页	117K
描述
General Purpose Transistors

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MMBT2132T3 数据手册

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by MMBT2132T1/D

SEMICONDUCTOR TECHNICAL DATA

NPN Bipolar Junction Transistor

0.7 AMPERES

(Complementary PNP Device: MMBT2131T1/T3)

30 VOLTS — V

(BR)CEO

342 mW

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector–Emitter Voltage

Symbol

Value

Unit

CEO

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CBO

5.0

EBO

CASE 318F–02, STYLE 2

SC–59 — 6 Lead

700

350

Base Current

Total Power Dissipation @ T = 25°C

342

178

366

°C/W

COLLECTOR

PINS 2, 5

Total Power Dissipation @ T = 85°C

(1)

(2)

Thermal Resistance — Junction to Ambient

BASE

PIN 6

Total Power Dissipation @ T = 25°C

665

346

188

°C/W

Total Power Dissipation @ T = 85°C

Thermal Resistance — Junction to Ambient

EMITTER

PIN 3

Operating and Storage Temperature Range

T , T

J stg

–55 to +150

°C

NPN

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Base Breakdown Voltage

(I = 100 Adc)

Vdc

Adc

(BR)CBO

—

Collector–Emitter Breakdown Voltage

(I = 10 mAdc)

(BR)CEO

Emitter–Base Breakdown Voltage

(I = 100 Adc)

(BR)EBO

5.0

Collector Cutoff Current

CBO

= 25 Vdc, I = 0 Adc)

—

1.0

= 25 Vdc, I = 0 Adc, T = 125°C)

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0 Adc)

Adc

EBO

—

ON CHARACTERISTICS

DC Current Gain

Vdc

= 3.0 Vdc, I = 100 mAdc)

150

—

0.25

0.4

1.1

1.0

Collector–Emitter Saturation Voltage

(I = 500 mAdc, I = 50 mAdc)

CE(sat)

BE(sat)

Collector–Emitter Saturation Voltage

(I = 700 mAdc, I = 70 mAdc)

—

Base–Emitter Saturation Voltage

(I = 700 mAdc, I = 70 mAdc)

—

Collector–Emitter Saturation Voltage

(I = 700 mAdc, V = 1.0 Vdc)

BE(on)

—

1. Minimum FR–4 or G–10 PCB, Operating to Steady State.

2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

3–1

M_Mo_oto_tor_ro_ol_laa_{, I}B_ncip_{. 1}o₉la₉₈r Power Transistor Device Data

12 3 4

中文翻译

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MMBT2132T3 替代型号

型号	品牌	替代类型	描述	数据表
MMBT2132T3G	ONSEMI	完全替代	General Purpose Transistors NPN Bipolar Junction Transistor
MMBT2132T1	ONSEMI	类似代替	General Purpose Transistors

与MMBT2132T3相关器件

型号	品牌	获取价格	描述	数据表
MMBT2132T3_06	ONSEMI	获取价格	General Purpose Transistors NPN Bipolar Junction Transistor
MMBT2132T3G	ONSEMI	获取价格	General Purpose Transistors NPN Bipolar Junction Transistor
MMBT2132T3G	ROCHESTER	获取价格	700mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318F-03, SC-59, 6 PIN
MMBT2222	BL Galaxy Electrical	获取价格	NPN General Purpose Amplifier
MMBT2222	ONSEMI	获取价格	General Purpose Transistors NPN Silicon
MMBT2222	SEMTECH	获取价格	NPN Silicon Epitaxial Planar Medium Power Transistor
MMBT2222	HTSEMI	获取价格	TRANSISTOR(NPN)
MMBT2222	SAMSUNG	获取价格	NPN (GENERAL PURPOSE TRANSISTOR)
MMBT2222	DIOTEC	获取价格	Surface mount Si-Epitaxial PlanarTransistors
MMBT2222	NXP	获取价格	NPN switching transistor

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