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MMBD717LT1 PDF预览

MMBD717LT1

更新时间: 2024-02-26 17:29:30
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
8页 61K
描述
Common Anode Schottky Barrier Diodes

MMBD717LT1 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-70包装说明:HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 419-04, SC-70, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:1.09Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:1247581
Samacsys Pin Count:3Samacsys Part Category:Schottky Diode
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SC-70 (SOT-323) CASE419-04
Samacsys Released Date:2018-05-24 11:13:43Is Samacsys:N
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MMBD717LT1 数据手册

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ON Semiconductort  
MMBD717LT1  
ON Semiconductor Preferred Device  
Common Anode  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
20 VOLT  
SCHOTTKY BARRIER  
DETECTOR AND SWITCHING  
DIODES  
Extremely Fast Switching Speed  
Extremely Low Forward Voltage — 0.28 Volts (Typ) @ I = 1 mAdc  
F
3
1
CATHODE  
1
ANODE  
3
2
2
CATHODE  
CASE 419–04, STYLE 4  
SOT–323 (SC–70)  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
V
R
20  
Volts  
Forward Power Dissipation  
P
F
J
@ T = 25°C  
200  
1.6  
mW  
mW/°C  
A
Derate above 25°C  
Operating Junction  
Temperature Range  
T
°C  
°C  
–55 to +150  
–55 to +150  
Storage Temperature Range  
DEVICE MARKING  
MMBD717LT1 = B3  
T
stg  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Breakdown Voltage  
(I = 10 µA)  
R
V
20  
Volts  
(BR)R  
Total Capacitance  
(V = 1.0 V, f = 1.0 MHz)  
R
C
2.0  
2.5  
1.0  
pF  
T
Reverse Leakage (V = 10 V)  
R
(For each individual diode while the second diode is unbiased)  
I
R
0.05  
0.28  
µAdc  
Vdc  
Forward Voltage  
(I = 1.0 mAdc)  
F
V
F
0.37  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
November, 2001 – Rev. 6  
MMBD717LT1/D  

MMBD717LT1 替代型号

型号 品牌 替代类型 描述 数据表
MMBD717LT1G ONSEMI

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