Datasheet > MMBD7000E

MMBD7000E

更新时间： 2024-11-13 14:54:07

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
3页	538K
描述
小信号开关二极管

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数据手册

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MMBD7000E 数据手册

MMBD7000E

Silicon Epitaxial Planar Switching Diode

Absolute Maximum Ratings (T_a= 25

)

Parameter

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

V_RRM

V_R

Average Forward Current

Repetitive Peak Forward Current

I_F(AV)

I_FRM

I_FSM

P_D

100

300

Non-Repetitive Peak Forward Surge Current (t = 10 ms)

Total Power Dissipation

150

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

833

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Characteristics at T_a= 25

Parameter

Symbol

V_F

Max.

1.2

Unit

Forward Voltage

at I_F= 100 mA

Reverse Current

at V_R= 80 V

I_R

C_T

t_rr

0.5

μA

Total Capacitance

at V_R= 0, f = 1 MHz

Reverse Recovery Time

at I_F= 10 mA , V_R= 6 V, I_rr= 0.1 × I_R, R_L= 100 Ω

1 / 3

Dated : 04/07/2023 Rev: 03

12 3

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