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MMBD7000E PDF预览

MMBD7000E

更新时间: 2024-11-13 14:54:07
品牌 Logo 应用领域
先科 - SWST 开关小信号开关二极管
页数 文件大小 规格书
3页 538K
描述
小信号开关二极管

MMBD7000E 数据手册

 浏览型号MMBD7000E的Datasheet PDF文件第2页浏览型号MMBD7000E的Datasheet PDF文件第3页 
MMBD7000E  
Silicon Epitaxial Planar Switching Diode  
3
1
2
Absolute Maximum Ratings (Ta = 25  
)
Parameter  
Symbol  
Value  
Unit  
Repetitive Peak Reverse Voltage  
Reverse Voltage  
VRRM  
VR  
85  
V
V
80  
Average Forward Current  
Repetitive Peak Forward Current  
IF(AV)  
IFRM  
IFSM  
PD  
100  
mA  
mA  
A
300  
Non-Repetitive Peak Forward Surge Current (t = 10 ms)  
Total Power Dissipation  
2
150  
mW  
Junction Temperature  
Tj  
150  
Storage Temperature Range  
Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
833  
Unit  
W
Thermal Resistance from Junction to Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
Characteristics at Ta = 25  
Parameter  
Symbol  
VF  
Max.  
1.2  
Unit  
V
Forward Voltage  
at IF = 100 mA  
Reverse Current  
at VR = 80 V  
IR  
CT  
trr  
0.5  
4
μA  
pF  
ns  
Total Capacitance  
at VR = 0, f = 1 MHz  
Reverse Recovery Time  
at IF = 10 mA , VR = 6 V, Irr = 0.1 × IR , RL = 100 Ω  
4
®
1 / 3  
Dated : 04/07/2023 Rev: 03  

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