Datasheet > MMBD7000_11

MMBD7000_11

更新时间： 2024-11-12 10:52:47

品牌	Logo	应用领域
美微科 - MCC		二极管开关
页数	文件大小	规格书
3页	212K
描述
225mW 100Volt Dual Switching Diode

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中文翻译

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数据手册

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MMBD7000_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

MMBD7000

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

•

Low Current Leakage

Low Cost

Small Outline Surface Mount Package

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking : M5C/ T3

225mW 100Volt

Dual Switching Diode

Pin Configuration

Top View

SOT-23

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

℃/W

Maximum Thermal Resistance: 556

Junction To Ambient

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

V_R

100V

IR=100uA

100V

Reverse Breakdown Voltage

INCHES

MIN

Average Rectified

Output Current

Power Dissipation

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I_O

200mA

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

P_TOT

I_FSM

225mW

0.5A

t=1s,Non-Repetitive

V_F

I_R

820mV I_FM= 10mA;

T_J= 25°C*

.085

.37

V_R=50Volts

T_J= 25°C

T_J= 125°C

Suggested Solder

Pad Layout

1.0µA

100µA

.031

.800

Maximum Junction

Capacitance

Reverse Recovery

Time

C_J

T_rr

2pF

Measured at

1.0MHz, V_R=0V

I_F=10mA

.035

.900

4nS

.079

2.000

inches

V_R= 0V

R_L=500Ω

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

.037

.950

.037

.950

www.mccsemi.com

Revision: A

2011/02/17

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