Datasheet > MMBD7000_01

MMBD7000_01

更新时间： 2024-11-12 11:57:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		信号二极管
页数	文件大小	规格书
2页	35K
描述
Small signal Diode

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数据手册

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MMBD7000_01 数据手册

MMBD7000

Connection Diagram

SOT-23

Small signal Diode

Absolute Maximum Ratings* T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_RRM

I_F(AV)

I_FSM

Maximum Repetitive Reverse Voltage

100

200

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

1.0

2.0

Pulse Width = 1.0 microsecond

Storage Temperature Range

-55 to +150

°C

T_stg

T_J

Operating Junction Temperature

150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

350

357

R_θJA

°C/W

Electrical Characteristics T_A= 25°C unless otherwise noted

Test Conditions

Min

Symbol

Parameter

Max

Units

V_R

V_F

Breakdown Voltage

100

I = 100

Forward Voltage

I_F= 1.0 mA

I_F= 10 mA

I_F= 100 mA

550

670

0.75

700

820

1.1

I_R

Reverse Current

V_R= 100 V

V_R= 50 V

V_R= 50 V, T_A= 125°C

µA

500

300

100

1.5

C_T

t_rr

Total Capacitance

V_R= 0, f = 1.0 MHz

Reverse Recovery Time

I_F= I_R= 10 mA, I_RR= 1.0 mA,

4.0

R = 100

Ω

MMBD7000, Rev. D

2001 Fairchild Semiconductor Corporation

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