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MMBD7000_

更新时间： 2024-11-12 04:39:31
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美台 - DIODES 二极管开关
页数 文件大小 规格书
3页 68K
描述
DUAL SURFACE MOUNT SWITCHING DIODE

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中文翻译

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MMBD7000_ 数据手册

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SPICE MODEL: MMBD7000  
MMBD7000  
DUAL SURFACE MOUNT SWITCHING DIODE  
Lead-free  
Features  
·
·
·
·
·
Fast Switching Speed  
SOT-23  
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
High Conductance  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
B
Lead Free/RoHS Compliant (Note 3)  
C
B
C
D
TOP VIEW  
Mechanical Data  
E
D
G
E
G
H
·
·
Case: SOT-23  
H
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
M
J
J
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
L
K
Terminals: Solderable per MIL-STD-202, Method 208  
L
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
M
a
·
·
·
Polarity: See Diagram  
All Dimensions in mm  
Marking: KJH (See Page 2)  
Weight: 0.008 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
75  
VR(RMS)  
IFM  
RMS Reverse Voltage  
53  
V
Forward Continuous Current (Note 1)  
300  
mA  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
2.0  
1.0  
IFSM  
A
@ t = 1.0s  
Pd  
Power Dissipation (Note 1)  
350  
357  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IR = 100mA  
75  
¾
V
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
0.55  
0.67  
0.75  
¾
0.70  
0.82  
1.10  
1.25  
VF  
Forward Voltage  
V
VR = 50V  
1.0  
3.0  
100  
25  
mA  
mA  
mA  
nA  
V
V
V
R = 100V  
IR  
Reverse Current (Note 2)  
¾
R = 50V, Tj = 125°C  
R = 20V  
VR = 0, f = 1.0MHz  
CT  
trr  
Total Capacitance  
¾
¾
2.0  
4.0  
pF  
ns  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
DS12025 Rev. 6 - 2  
1 of 3  
MMBD7000  
www.diodes.com  
ã Diodes Incorporated  
123

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