Datasheet > MMBD7000

MMBD7000

更新时间： 2024-11-13 14:54:15

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1592K
描述
SOT-23

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中文翻译

获取价格

数据手册

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MMBD7000 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

MMBD7000 ^{SWITCHING DIODE}

SOT-23

FEATURES



Dual Swithching Diode

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

MARKING: M5C

M5C

M5C = Device code

Solid dot = Green molding compound device.

Maximum Ratings@Ta=25℃

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak Reverse Voltage

V_RM

100

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

RMS Reverse Voltage

V_RRM

V_RWM

V_R(RMS)

I_O

200

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current @ t =8.3

Power Dissipation

I_FSM

225

℃/W

℃

Thermal Resistance,Junction to Ambient

R_θJA

T_J,T_STG

556

Operation Junction and Storage Temperature Range

-55~+150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

V_(BR)

I_R=100μA

100

V_R=50V

1.0

3.0

Reverse voltage leakage current

Forward voltage

I_R

μA

V_R=100V

I_F=1mA

0.55

0.67

0.75

0.7

0.82

1.1

V_F

I_F=10mA

I_F=100mA

Diode capacitance

C^T

t_rr

V_R=0V,f =1.0MHz

I^F=I^R=10mA,

Irr=0.1 x IR,RL=100Ω

Reverse recovery time

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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