Datasheet > MMBD4448HAQW

MMBD4448HAQW

更新时间： 2024-11-26 14:54:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1597K
描述
SOT-363

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中文翻译

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技术参数
数据手册

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MMBD4448HAQW 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.58	Is Samacsys：	N
最大正向电压 (VF)：	0.72 V	最高工作温度：	150 °C
最低工作温度：	-65 °C	最大功率耗散：	0.2 W
最大重复峰值反向电压：	80 V	最大反向电流：	50 µA
最大反向恢复时间：	0.004 µs	反向测试电压：	75 V
子类别：	Other Diodes	表面贴装：	YES
Base Number Matches：	1

MMBD4448HAQW 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Diodes

MMBD4448HAQW/HADW/HCDW/HSDW/HTW

SOT-363

Switching Diode

FEATURES

Fast Switching Speed

Ultra-Small Surface Mount Package

For General Purpose Switching Applications

High Conductance Power Dissipation

MMBD4448HAQW MMBD4448HADW MMBD4448HCDW MMBD4448HSDW

MMBD4448HTW

MARKING:KA5

MARKING:KA6

MARKING:KA7

MARKING:KAB

MARKING:KAA

- - -

- -

+ +

KAA

KA7

KA6

KA5

KAB

- -

+ + +

+ +

Soliddot = Pin1 indicate.

Soliddot = Green molding compound device.

℃

Maximum Ratings and Electrical Characteristics, Single Diode @T^a=25

Parameter

Symbol

V_RM

Limit

Unit

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

500

250

I_O

Non-Repetitive PeakForward Surge Current @t=8.3ms

I_FSM

2.0

Power Dissipation

200

R_θJA

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

625

℃ /W

℃

T_J,T_STG

-55 ~+150

www.jscj-elec.com

Rev. - 2.1

12 3 4 5

中文翻译

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