Datasheet > MMBD110T1

MMBD110T1

更新时间： 2024-10-27 22:34:15

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
4页	84K
描述
Schottky Barrier Diodes

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数据手册

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MMBD110T1 数据手册

LESHAN RADIO COMPANY, LTD.

Schottky Barrier Diodes

MMBD110T1

MMBD330T1

MMBD770T1

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF

detector applications. Readily available to many other fast switching RF and digital

applications. They are housed in the SOT–323/SC–70 package which is designed for

low–power surface mount applications.

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

• Available in 8 mm Tape and Reel

CASE 419–02, STYLE 2

SOT–323 /SC – 70

DEVICE MARKING

MMBD110T1 = 4M

MAXIMUM RATINGS

Rating

MMBD330T1 = 4T

MMBD770T1 = 5H

Symbol Value

Unit

Reverse Voltage

MMBD110T1

MMBD330T1

MMBD770T1

V_R

7.0

Vdc

Forward Power Dissipation

T_A= 25°C

P_F

120

Junction Temperature

Storage Temperature Range

T_J

–55 to +125

°C

T_stg

–55 to +150 °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max Unit

Volts

—

Reverse Breakdown Voltage

(I_R= 10 µA)

V_(BR)R

MMBD110T1

MMBD330T1

MMBD770T1

7.0

—

Diode Capacitance

(V_R= 0, f = 1.0 MHZ, Note 1)

(V_R= 15 Volts, f = 1.0 MHZ)

(V_R= 20 Volts, f = 1.0 MHZ)

Reverse Leakage

(V_R= 3.0 V)

C_T

MMBD110T1

MMBD330T1

MMBD770T1

—

0.88

0.9

1.0

1.5

0.5

1.0

I_R

nAdc

250

200

MMBD110T1

MMBD330T1

MMBD770T1

—

(V_R= 25 V)

(V_R= 35 V)

9.0

Noise Figure

V_F

(f = 1.0 GHz, Note 2)

Forward Voltage

(I_F= 10 mA)

MMBD110T1

—

6.0

—

Vdc

0.6

MMBD110T1

MMBD330T1

—

0.5

0.38

0.52

0.42

0.7

(I_F= 1.0 mAdc)

0.45

0.6

(I_F= 10 mA)

(I_F= 1.0 mAdc)

MMBD770T1

0.5

(I_F= 10 mA)

1.0

MMBD110. 330. 770T1–1/4

12 3 4

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