Datasheet > MMA25312B

MMA25312B

更新时间： 2024-09-28 15:19:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
10页	336K
描述
InGaP HBT Linear Amplifier, 2300-2700 MHz, 26 dB, 31 dBm

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMA25312B 数据手册

Document Number: MMA25312B

Rev. 2, 9/2014

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

MMA25312BT1

Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMA25312B is a 2--stage high efficiency InGaP HBT driver amplifier

designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX

(802.16e) and wireless broadband mesh networks. It is suitable for applications

with frequencies from 2300 to 2700 MHz using simple external matching

components with a 3 to 5 V supply.

2300--2700 MHz, 26 dB

31 dBm

InGaP HBT LINEAR AMPLIFIER



Typical Performance: V_CC1= V_CC2= V_BIAS= 5 Vdc, I_CQ= 150 mA

EVM

(%)

out

Frequency

2450 MHz

2350 MHz

(dBm)

(dB)

27.4

27.2

Test Signal

20.5

3.0

WLAN (802.11g)

WiMAX (802.16e)

QFN 3  3

23.0

Features



Frequency: 2300--2700 MHz

P1dB: 31 dBm @ 2500 MHz

Power Gain: 26 dB @ 2500 MHz

Third Order Output Intercept Point: 40 dBm @ 2500 MHz

Active Bias Control (On--chip)

Single 3 to 5 V Supply

Single--ended Power Detector

Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

Table 1. Typical CW Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

2300 2500 2700

Characteristic

Symbol MHz

MHz

Unit

550

Small--Signal Gain

(S21)

-- 1 4

-- 11

24.5

Supply Current

dBm

C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1dB

-- 1 2

-- 1 3

-- 1 2

-- 1 5

29.8

Storage Temperature Range

Junction Temperature

stg

--65 to +150

175

C

Output Return Loss

(S22)

Power Output @

1dB Compression

dBm

1. V

= V

= 5 Vdc, T = 25C, 50 ohm system, CW

BIAS A

CC1

CC2

Application Circuit

Table 3. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

C/W

Thermal Resistance, Junction to Case



Case Temperature 91C, V = V

= V

= 5 Vdc

BIAS

CC1

CC2

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMA25312BT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...10

中文翻译

下载PDF

与MMA25312B相关器件

型号	品牌	获取价格	描述	数据表
MMA25312BT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMA2602KGCW	NXP	获取价格	DSI Inertial Sensor
MMA2602KGCWR2	NXP	获取价格	DSI Inertial Sensor
MMA2602KW	FREESCALE	获取价格	DSI Inertial Sensor
MMA2602KWR2	FREESCALE	获取价格	DSI Inertial Sensor
MMA2602NKW	FREESCALE	获取价格	DSI Inertial Sensor
MMA2602NKWR2	FREESCALE	获取价格	DSI Inertial Sensor
MMA2602NWR2	NXP	获取价格	SPECIALTY ANALOG CIRCUIT, QCC16, 6 X 6 MM, 1.98 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, QFN
MMA2602WR2	NXP	获取价格	SPECIALTY ANALOG CIRCUIT, QCC16, 6 X 6 MM, 1.98 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, QFN
MMA2605KGCW	NXP	获取价格	DSI Inertial Sensor

与MMA25312B相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

21
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

16
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

18
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

29

产品中心

服务支持

精选活动

关于我们

帮助中心

MMA25312B

MMA25312B 数据手册

与MMA25312B相关器件

与MMA25312B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMA25312B

MMA25312B 数据手册

与MMA25312B相关器件

与MMA25312B相关文章

您还可以找

您在本页遇到什么问题？